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Freescale Semiconductor Data Sheet: Technical Data
Document Number: MC9RS08KB12 Rev. 3, 8/2009
MC9RS08KB12
MC9RS08KB12 Series
Covers:MC9RS08KB12 MC9RS08KB8 MC9RS08KB4 MC9RS08KB2
* 8-Bit RS08 Central Processor Unit (CPU) - Up to 20 MHz CPU at 1.8 V to 5.5 V across temperature range of -40 C to 85 C - Subset of HC08 instruction set with added BGND instruction - Single Global interrupt vector * On-Chip Memory - Up to 12 KB flash read/program/erase over full operating voltage and temperature, 12 KB/8 KB/4 KB/2 KB flash are optional - Up to 254-byte random-access memory (RAM), 254-byte/126-byte RAM are optional - Security circuitry to prevent unauthorized access to flash contents * Power-Saving Modes - Wait mode -- CPU shuts down; system clocks continue to run; full voltage regulation - Stop mode -- CPU shuts down; system clocks are stopped; voltage regulator in standby - Wakeup from power-saving modes using RTI, KBI, ADC, ACMP, SCI and LVD * Clock Source Options - Oscillator (XOSC) -- Loop-control Pierce oscillator; crystal or ceramic resonator range of 31.25 kHz to 39.0625 kHz or 1 MHz to 16 MHz - Internal Clock Source (ICS) -- Internal clock source module containing a frequency-locked-loop (FLL) controlled by internal or external reference; precision trimming of internal reference allows 0.2% resolution and 2% deviation over temperature and voltage; supporting bus frequencies up to 10 MHz * System Protection - Watchdog computer operating properly (COP) reset with option to run from dedicated 1 kHz internal low power oscillator - Low-voltage detection with reset or interrupt - Illegal opcode detection with reset - Illegal address detection with reset - Flash-block protection
20-Pin SOIC Case 751D 16-Pin TSSOP Case 948F 16-Pin SOIC N/B Case 751B 8-Pin SOIC Case 751
8-Pin DFN Case 1452-02
* Development Support - Single-wire background debug interface - Breakpoint capability to allow single breakpoint setting during in-circuit debugging * Peripherals - ADC -- 12-channel, 10-bit resolution; 2.5 s conversion time; automatic compare function; 1.7 mV/C temperature sensor; internal bandgap reference channel; operation in stop; hardware trigger; fully functional from 2.7 V to 5.5 V - ACMP -- Analog comparator; full rail-to-rail supply operation; option to compare to fixed internal bandgap reference voltage; can operate in stop mode - TPM -- One 2-channel timer/pulse-width modulator module; selectable input capture, output compare, or buffered edge- or center-aligned PWM on each channel - IIC -- Inter-integrated circuit bus module capable of operation up to 100 kbps with maximum bus loading; capable of higher baud rates with reduced loading - SCI -- One serial communications interface module with optional 13-bit break; LIN extensions - MTIM -- Two 8-bit modulo timers; optional clock sources - RTI -- One real-time clock with optional clock sources - KBI -- Keyboard interrupts; up to 8 ports * Input/Output - 18 GPIOs in 20-pin package; 14 GPIOs in 16-pin package; 6 GPIOs in 8-pin package; including one output-only pin and one input-only pin - Hysteresis and configurable pullup device on all input pins; configurable slew rate and drive strength on all output pins * Package Options - MC9RS08KB12/MC9RS08KB8/MC9RS08KB4 -- 20-pin SOIC, 16-pin SOIC NB or TSSOP - MC9RS08KB2 -- 8-pin SOIC or DFN
This document contains information on a product under development. Freescale reserves the right to change or discontinue this product without notice. (c) Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
Table of Contents
1 2 3 MCU Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin Assignments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.1 Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.2 Parameter Classification. . . . . . . . . . . . . . . . . . . . . . . . . 6 3.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . 6 3.4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.5 ESD Protection and Latch-Up Immunity. . . . . . . . . . . . . 8 3.6 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.7 Supply Current Characteristics. . . . . . . . . . . . . . . . . . . 22 3.8 External Oscillator (XOSC) Characteristics . . . . . . . . . 25 3.9 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 3.9.1 Control Timing . . . . . . . . . . . . . . . . . . . . . . . . . .26 3.9.2 TPM/MTIM Module Timing . . . . . . . . . . . . . . . .27 3.10 Analog Comparator (ACMP) Electrical . . . . . . . . . . . . .27 3.11 Internal Clock Source Characteristics. . . . . . . . . . . . . .28 3.12 ADC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .28 3.13 Flash Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . .30 3.14 EMC Performance. . . . . . . . . . . . . . . . . . . . . . . . . . . . .33 3.14.1 Radiated Emissions . . . . . . . . . . . . . . . . . . . . . .33 Ordering Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34 Mechanical Drawings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
4 5
Revision History
To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information available, refer to:
http://freescale.com/
The following revision history table summarizes changes contained in this document.
Revision Date Description of Changes
1 2 3
4/13/2009 5/22/2009 8/31/2009
Updated on shared review comments, added package information. Completed most of the TBDs, corrected the block diagram. Completed all the TBDs. Changed VLVD and added RPD in the Table 7. Changed SIDD, ADC adder from stop, RTI adder from stop with 1 kHz clock source enabled and LVI adder from stop at 5 V in the Table 8.
Related Documentation
Find the most current versions of all documents at: http://www.freescale.com
Reference Manual (MC9RS08KB12RM) Contains extensive product information including modes of operation, memory, resets and interrupts, register definition, port pins, CPU, and all module information.
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 2 Freescale Semiconductor
MCU Block Diagram
1
VDD VSS
MCU Block Diagram
VREFH VREFL VDDAD VSSAD 12-CH 10-BIT ANALOG-TO-DIGITAL CONVERTER(ADC) ANALOG COMPARATOR (ACMP) RS08 CORE 8-BIT KEYBOARD CPU BDC INTERRUPT(KBI) SERIAL COMMUNICATION INTERFACE (SCI) 2-CH TIMER/PWM MODULE (TPM) MODULO TIMER WAKEUP VPP LVD (MTIM1) MODULO TIMER (MTIM2) INTER-INTEGRATED CIRCUIT MODULE (IIC)
TxD RxD
The block diagram, Figure 1, shows the structure of the MC9RS08KB12 MCU.
ADP[3:0] ADP[7:4] ADP[11:8] ACMP+ ACMPACMPO PTA0/KBIP0/TPMCH0/ADP0/ACMP+ PTA1/KBIP1/TPMCH1/ADP1/ACMP-
PORT A
KBIP[3:0] KBIP[7:4]
PTA2/KBIP2/SDA/RxD/ADP2 PTA3/KBIP3/SCL/TxD/ADP3 PTA4/ACMPO/BKGD/MS2 PTA5/TCLK/RESET/VPP1
RESET
RS08 SYSTEM CONTROL RESETS AND INTERRUPTS MODES OF OPERATION POWER MANAGEMENT COP RTI
TPMCH0 TPMCH1 TCLK
TCLK
PTB0/KBIP4/RxD/ADP4 PTB1/KBIP5/TxD/ADP5
PORT B
USER FLASH MC9RS08KB12 = 12 KB MC9RS08KB8 = 8 KB MC9RS08KB4 = 4 KB MC9RS08KB2 = 2 KB USER RAM MC9RS08KB12/KB8 = 254 BYTES MC9RS08KB4/KB2 = 126 BYTES 20 MHz INTERNAL CLOCK SOURCE (ICS) LOW-POWER OSCILLATOR 31.25 kHz to 39.0625 kHz 1 MHz to 16 MHz (XOSC) EXTAL
TCLK SCL SDA
PTB2/KBIP6/ADP6 PTB3/KBIP7/ADP7 PTB4/TPMCH0 PTB5/TPMCH1 PTB6/SDA/XTAL
XTAL
PTB7/SCL/EXTAL
PTC0/ADP8
PORT C
PTC1/ADP9 PTC2/ADP10 PTC3/ADP11
VDD VSS VOLTAGE REGULATOR
NOTES: 1. PTA5/TCLK/RESET/VPP is an input-only pin when used as port pin 2. PTA4/ACMPO/BKGD/MS is an output-only pin when used as port pin
Figure 1. MC9RS08KB12 Series Block Diagram
2
Pin Assignments
This section shows the pin assignments in the packages available for the MC9RS08KB12 series.
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 3
Pin Assignments
Table 1. Pin Availability by Package Pin-Count
Pin Number 20 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
1
<-- Lowest Port Pin PTA5 PTA4 ACMPO Alt 1
Priority Alt 2
--> Highest Alt 3 RESET MS VDD VSS VPP Alt 4
16 1 2 3 4 5 6 7 8 -- -- -- -- 9 10 11 12 13 14 15 16
8 1 2 3 4 -- -- -- -- -- -- -- -- -- -- -- -- 5 6 7 8
TCLK BKGD
PTB7 PTB6 PTB5 PTB4 PTC3 PTC2 PTC1 PTC0 PTB3 PTB2 PTB1 PTB0 PTA3 PTA2 PTA1 PTA0
SCL1 SDA1 TPMCH12 TPMCH02 ADP11 ADP10 ADP9 ADP8 KBIP7 KBIP6 KBIP5 KBIP4 KBIP3 KBIP2 KBIP1 KBIP0 TxD3 RxD3 SCL1 SDA1 TPMCH12 TPMCH02 ADP7 ADP6 ADP5 ADP4 TxD3 RxD3 ADP1 ADP0
EXTAL XTAL
ADP3 ADP2 ACMP- ACMP+
IIC pins can be remapped to PTB6 and PTB7, default reset location is PTA2 and PTA3. It can be configured only once. 2 TPM pins can be remapped to PTB4 and PTB5, default reset location is PTA0 and PTA1. 3 SCI pins can be remapped to PTA2 and PTA3, default reset location is PTB0 and PTB1. It can be configured only once.
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 4 Freescale Semiconductor
Pin Assignments
PTA5/TCLK/RESET/VPP PTA4/ACMPO/BKGD/MS VDD VSS PTB7/SCL/EXTAL PTB6/SDA/XTAL PTB5/TPMCH1 PTB4/TPMCH0 PTC3/ADP11 PTC2/ADP10
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
PTA0/KBIP0/TPMCH0/ADP0/ACMP+ PTA1/KBIP1/TPMCH1/ADP1/ACMP- PTA2/KBIP2/SDA/RxD/ADP2 PTA3/KBIP3/SCL/TxD/ADP3 PTB0/KBIP4/RxD/ADP4 PTB1/KBIP5/TxD/ADP5 PTB2/KBIP6/ADP6 PTB3/KBIP7/ADP7 PTC0/ADP8 PTC1/ADP9
Figure 2. MC9RS08KB12 Series 20-Pin SOIC Package
PTA5/TCLK/RESET/VPP PTA4/ACMPO/BKGD/MS VDD VSS PTB7/SCL/EXTAL PTB6/SDA/XTAL PTB5/TPMCH1 PTB4/TPMCH0
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
PTA0/KBIP0/TPMCH0/ADP0/ACMP+ PTA1/KBIP1/TPMCH1/ADP1/ACMP- PTA2/KBIP2/SDA/RxD/ADP2 PTA3/KBIP3/SCL/TxD/ADP3 PTB0/KBIP4/RxD/ADP4 PTB1/KBIP5/TxD/ADP5 PTB2/KBIP6/ADP6 PTB3/KBIP7/ADP7
Figure 3. MC9RS08KB12 Series 16-Pin SOIC NB/TSSOP Package
PTA5/TCLK/RESET/VPP PTA4/ACMPO/BKGD/MS VDD VSS
1 2 3 4
8 7 6 5
PTA0/KBIP0/TPMCH0/ADP0/ACMP+ PTA1/KBIP1/TPMCH1/ADP1/ACMP- PTA2/KBIP2/SDA/RxD/ADP2 PTA3/KBIP3/SCL/TxD/ADP3
Figure 4. MC9RS08KB12 Series 8-Pin SOIC/DFN Package
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 5
Electrical Characteristics
3
3.1
Electrical Characteristics
Introduction
This chapter contains electrical and timing specifications for the MC9RS08KB12 series of microcontrollers available at the time of publication.
3.2
Parameter Classification
The electrical parameters shown in this supplement are guaranteed by various methods. To give the customer a better understanding the following classification is used and the parameters are tagged accordingly in the tables where appropriate:
Table 2. Parameter Classifications
P C Those parameters are guaranteed during production testing on each individual device. Those parameters are achieved by the design characterization by measuring a statistically relevant sample size across process variations. Those parameters are achieved by design characterization on a small sample size from typical devices under typical conditions unless otherwise noted. All values shown in the typical column are within this category. Those parameters are derived mainly from simulations.
T
D
NOTE The classification is shown in the column labeled "C" in the parameter tables where appropriate.
3.3
Absolute Maximum Ratings
Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the limits specified in Table 3 may affect device reliability or cause permanent damage to the device. For functional operating conditions, refer to the remaining tables in this chapter. This device contains circuitry protecting against damage due to high static voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate logic voltage level (for instance, VSS or VDD) or the programmable pull-up resistor associated with the pin is enabled.
Table 3. Absolute Maximum Ratings
Rating Supply voltage Maximum current into VDD Digital input voltage Instantaneous maximum current Single pin limit (applies to all port pins)1, 2, 3 Symbol VDD IDD VIn ID Value -0.3 to 5.8 120 -0.3 to VDD + 0.3 25 Unit V mA V mA
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 6 Freescale Semiconductor
Electrical Characteristics
Table 3. Absolute Maximum Ratings (continued)
Rating Storage temperature range
1
Symbol Tstg
Value -55 to 150
Unit C
Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate resistance values for positive (VDD) and negative (VSS) clamp voltages, then use the larger of the two resistance values. 2 All functional non-supply pins are internally clamped to VSS and VDD except the RESET/VPP pin which is internally clamped to VSS only. 3 Power supply must maintain regulation within operating VDD range during instantaneous and operating maximum current conditions. If positive injection current (VIn > VDD) is greater than IDD, the injection current may flow out of VDD and could result in external power supply going out of regulation. Ensure external VDD load will shunt current greater than maximum injection current. This will be the greatest risk when the MCU is not consuming power. Examples are: if no system clock is present, or if the clock rate is very low which would reduce overall power consumption.
3.4
Thermal Characteristics
This section provides information about operating temperature range, power dissipation, and package thermal resistance. Power dissipation on I/O pins is usually small compared to the power dissipation in on-chip logic and voltage regulator circuits and it is user-determined rather than being controlled by the MCU design. In order to take PI/O into account in power calculations, determine the difference between actual pin voltage and VSS or VDD and multiply by the pin current for each I/O pin. Except in cases of unusually high pin current (heavy loads), the difference between pin voltage and VSS or VDD will be very small.
Table 4. Thermal Characteristics
Rating Operating temperature range (packaged) Maximum junction temperature Thermal resistance 20-pin SOIC Thermal resistance 16-pin SOIC NB Thermal resistance 16-pin TSSOP Thermal resistance 8-pin SOIC Thermal resistance 8-pin DFN Symbol TA TJMAX JA JA JA JA JA Value TL to TH -40 to 85 150 83 103 29 150 110 Unit C C C/W C/W C/W C/W C/W
The average chip-junction temperature (TJ) in C can be obtained from:
TJ = TA + (PD x JA) Eqn. 1
where: TA = Ambient temperature, C JA = Package thermal resistance, junction-to-ambient, C /W PD = Pint + PI/O Pint = IDD x VDD, Watts chip internal power PI/O = Power dissipation on input and output pins user determined
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 7
Electrical Characteristics
For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ (if PI/O is neglected) is:
PD = K / (TJ + 273C) Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD x (TA + 273C) + JAx (PD)2 Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 1 and Equation 2 iteratively for any value of TA.
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage. During the device qualification ESD stresses were performed for the human body model (HBM) and the charge device model (CDM). A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot temperature, unless specified otherwise in the device specification.
Table 5. ESD and Latch-Up Test Conditions
Model Human body Description Series resistance Storage capacitance Number of pulses per pin Minimum input voltage limit Latch-up Maximum input voltage limit -- 7.5 V Symbol R1 C -- -- Value 1500 100 1 -2.5 Unit pF -- V
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 8 Freescale Semiconductor
Electrical Characteristics
Table 6. ESD and Latch-Up Protection Characteristics
No. 1 2 3
1
Rating1 Human body model (HBM) Charge device model (CDM) Latch-up current at TA = 85 C
Symbol VHBM VCDM ILAT
Min 2000 500 100
Max -- -- --
Unit V V mA
Parameter is achieved by design characterization on a small sample size from typical devices under typical conditions unless otherwise noted.
3.6
DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power supply current in various operating modes.
Table 7. DC Characteristics (Temperature Range = -40 to 85C Ambient)
No. 1 2 3 4 5 6 7 8 9 10 11 12 13 C -- C P C C C C C C P P P P Power on RESET (POR) voltage Input high voltage (VDD > 2.3V) (all digital inputs) Input high voltage (1.8 V VDD 2.3 V) (all digital inputs) Input low voltage (VDD > 2.3 V) (all digital inputs) Input low voltage (1.8 V VDD 2.3 V) (all digital inputs) Input hysteresis (all digital inputs) Input leakage current (per pin) VIn = VDD or VSS, all input only pins High impedance (off-state) leakage current (per pin) VIn = VDD or VSS, all input/output Internal pullup resistors2(all port pins) Internal pulldown resistors2(all port pins) Output high voltage -- Low drive (PTxDSn = 0) 5 V, ILoad = 2 mA 3 V, ILoad = 1 mA 1.8 V, ILoad = 0.5 mA Output high voltage -- High drive (PTxDSn = 1) 5 V, ILoad = 5 mA 3 V, ILoad = 3 mA 1.8 V, ILoad = 2 mA Maximum total IOH for all port pins Parameter Supply voltage (run, wait and stop modes.) 0 < fBus <10 MHz Minimum RAM retention supply voltage applied to VDD Low-voltage detection threshold (VDD falling) (VDD rising) VLVD VPOR1 VIH VIH VIL VIL Vhys1 |IIn| |IOZ| RPU RPD 1.80 1.88 0.9 0.70 x VDD 0.85 x VDD -- -- 0.06 x VDD -- -- 20 20 1.86 1.94 -- -- -- -- -- -- 0.025 0.025 45 45 -- -- -- -- -- -- -- 1.95 2.05 1.7 -- -- 0.30 x VDD 0.30 x VDD -- 1.0 1.0 65 65 -- -- -- -- -- -- 40 mA V V V V V V V A A k k Symbol VDD VRAM Min 1.8 0.81 Typical -- -- Max 5.5 -- Unit V V
VDD - 0.8 VOH VDD - 0.8 |IOHT| --
14
C
V
15
C
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 9
Electrical Characteristics
Table 7. DC Characteristics (Temperature Range = -40 to 85C Ambient) (continued)
No. C Parameter Output low voltage -- Low drive (PTxDSn = 0) 5 V, ILoad = 2 mA 3 V, ILoad = 1 mA 1.8 V, ILoad = 0.5 mA Output low voltage -- High drive (PTxDSn = 1) 5 V, ILoad = 5 mA 3 V, ILoad = 3 mA 1.8 V, ILoad = 2 mA Maximum total IOL for all port pins DC injection current VIn < VSS, VIn > VDD Single pin limit Total MCU limit, includes sum of all stressed pins Input capacitance (all non-supply pins) CIn
3 , 4 , 5 ,6
Symbol
Min -- -- -- -- -- --
Typical -- -- -- -- -- -- --
Max
Unit
0.8 V 0.8 40 mA
16
C
VOL
17 18 19
1 2 3 4 5 6
C C C
IOLT
--
-- -- --
-- -- --
0.2 0.8 7
mA pF
This parameter is characterized and not tested on each device. Measurement condition for pull resistors: VIn = VSS for pullup and VIn = VDD for pulldown. All functional non-supply pins are internally clamped to VSS and VDD except the RESET/VPP which is internally clamped to VSS only. Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate resistance values for positive and negative clamp voltages, then use the larger of the two values. Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate resistance values for positive and negative clamp voltages, then use the larger of the two values. This parameter is characterized and not tested on each device.
VOH vs. IOH (High Drive) at Vdd=5.5V
5.60 5.40 5.20 VOH (V) 5.00 4.80 4.60 4.40 4.20 1 2 3 4 5 6 7 8 9 11 13 15 17 IOH (mA) 85C 25C -40C
Figure 5. Typical VOH vs. IOH VDD = 5.5 V (High Drive)
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 10 Freescale Semiconductor
Electrical Characteristics
VOH vs. IOH (Low Drive) at Vdd=5.5V
6.00 5.00 VOH (V) 4.00 3.00 2.00 1.00 0.00 1 2 3 IOH (mA) 4 5 6 85C 25C -40C
Figure 6. Typical VOH vs. IOH VDD = 5.5 V (Low Drive)
VOH vs. IOH (High Drive) at Vdd=3.0V
3.50 3.00 2.50 VOH (V) 2.00 1.50 1.00 0.50 0.00 1 2 3 4 5 6 7 8 9 10 IOH (mA) 85C 25C -40C
Figure 7. Typical VOH vs. IOH VDD = 3.0 V (High Drive)
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 11
Electrical Characteristics
VOH vs. IOH (Low Drive) at Vdd=3.0V
3.00 2.50 VOH (V) 2.00 1.50 1.00 0.50 0.00 1 IOH (mA) 2 85C 25C -40C
Figure 8. Typical VOH vs. IOH VDD = 3.0 V (Low Drive)
VOH vs. IOH (High Drive) at Vdd=1.8V
1.80 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 1 2 IOH (mA) 3
VOH (V)
85C 25C -40C
Figure 9. Typical VOH vs. IOH VDD = 1.8 V (High Drive)
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 12 Freescale Semiconductor
Electrical Characteristics
VOH vs. IOH (Low Drive) at Vdd=1.8V
1.80 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 0.3 0.4 0.5 IOH (mA) 0.6 0.7
VOH (V)
85C 25C -40C
Figure 10. Typical VOH vs. IOH VDD = 1.8 V (Low Drive)
VOL vs. IOL (High Drive) at Vdd=5.5V
800.00 700.00 600.00 VOL (mV) 500.00 400.00 300.00 200.00 100.00 0.00 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 IOL (mA) VOL @85C VOL @25C VOL @-40C
Figure 11. Typical VOL vs. IOL VDD = 5.5 V (High Drive)
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 13
Electrical Characteristics
VOL vs. IOL (Low Drive) at Vdd=5.5V
2500.00 2000.00
VOL (mV)
1500.00 1000.00 500.00 0.00 1 2 3 4 5 6 7 8 9 10 11 IOL (mA)
VOL @85C VOL @25C VOL @-40C
Figure 12. Typical VOL vs. IOL VDD = 5.5 V (Low Drive)
VOL vs. IOL (High Drive) at Vdd=3.0V
1200.00 1000.00
VOL (mV)
800.00 600.00 400.00 200.00 0.00 1 2 3 4 5 6 7 8 9 10 11 IOL (mA)
VOL @85C VOL @25C VOL @-40C
Figure 13. Typical VOL vs. IOL VDD = 3.0 V (High Drive)
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 14 Freescale Semiconductor
Electrical Characteristics
VOL vs. IOL (Low Drive) at Vdd=3.0V
1000.00 900.00 800.00 700.00 600.00 500.00 400.00 300.00 200.00 100.00 0.00 1 2 IOL (mA) 3
VOL (mV)
VOL @85C VOL @25C VOL @-40C
Figure 14. Typical VOL vs. IOL VDD = 3.0 V (Low Drive)
VOL vs. IOL (High Drive) at Vdd=1.8V
800.00 700.00 600.00
VOL (mV)
500.00 400.00 300.00 200.00 100.00 0.00 0.8 1 2 IOL (mA) 3 4
VOL @85C VOL @25C VOL @-40C
Figure 15. Typical VOL vs. IOL VDD = 1.8 V (High Drive)
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 15
Electrical Characteristics
VOL vs. IOL (Low Drive) at Vdd=1.8V
400.00 350.00 300.00
VOL (mV)
250.00 200.00 150.00 100.00 50.00 0.00 0.1 0.2 0.3 0.4 IOL (mA) 0.5 0.6 0.7
VOL @85C VOL @25C VOL @-40C
Figure 16. Typical VOL vs. IOL VDD = 1.8 V (Low Drive)
VOH vs. IOH (High Drive) at Vdd=5.5V
5.60 5.40 5.20
VOH (V)
5.00 4.80 4.60 4.40 4.20 1 2 3 4 5 6 7 8 9 11 13 15 17 IOH (mA)
85C 25C -40C
Figure 17. Typical IOH vs. VDD-VOH VDD = 5.5 V (High Drive)
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 16 Freescale Semiconductor
Electrical Characteristics
IOH vs VDD-VOH (Low Drive) at VDD = 5.5 V
VDD-VOH (V) -12 -10
IOH (mA)
-8 -6 -4 -2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
85C 25C - 40C
Figure 18. Typical IOH vs. VDD-VOH VDD = 5.5 V (Low Drive)
IOH vs VDD-VOH (High Drive) at VDD = 3.0 V
VDD-VOH (V) -25 -20 IOH (mA) -15 -10 -5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 85C 25C - 40C
Figure 19. Typical IOH vs. VDD-VOH VDD = 3 V (High Drive)
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 17
Electrical Characteristics
IOH vs VDD-VOH (Low Drive) at VDD = 3.0 V
VDD-VOH (V) -5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IOH (mA)
85C 25C - 40C
Figure 20. Typical IOH vs. VDD-VOH VDD = 3 V (Low Drive)
IOH vs VDD-VOH (High Drive) at VDD = 1.8 V
VDD-VOH (V) -7 -6 IOH (mA) -5 -4 -3 -2 -1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 85C 25C - 40C
Figure 21. Typical IOH vs. VDD-VOH VDD = 1.8 V (High Drive)
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 18 Freescale Semiconductor
Electrical Characteristics
IOH vs VDD-VOH (Low Drive) at VDD = 1.8 V
VDD-VOH (V) -1.4 -1.2 IOH (mA) -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 85C 25C - 40C
Figure 22. Typical IOH vs. VDD-VOH VDD = 1.8 V (Low Drive)
IOL vs VOL (High Drive) at VDD = 5.5 V
60.00 50.00 IOL (mA) 40.00 30.00 20.00 10.00 0.00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VOL (V) 85C 25C - 40C
Figure 23. Typical IOL vs. VOL VDD = 5.5 V (High Drive)
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 19
Electrical Characteristics
IOL vs VOL (Low Drive) at VDD = 5.5 V
16.00 14.00 12.00 IOL (mA) 10.00 8.00 6.00 4.00 2.00 0.00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VOL (V) 85C 25C - 40C
Figure 24. Typical IOL vs. VOL VDD = 5.5 V (Low Drive)
IOL vs VOL (High Drive) at VDD = 3.0 V
20.00 18.00 16.00 14.00 12.00 10.00 8.00 6.00 4.00 2.00 0.00 0.2 0.4 0.6 0.8 VOL (V) 1 1.2 1.4
IOL (mA)
85C 25C - 40C
Figure 25. Typical IOL vs. VOL VDD = 3 V (High Drive)
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 20 Freescale Semiconductor
Electrical Characteristics
IOL vs VOL (Low Drive) at VDD = 3.0 V
6.00 5.00 IOL (mA) 4.00 3.00 2.00 1.00 0.00 0.2 0.4 0.6 0.8 VOL (V) 1 1.2 1.4 85C 25C - 40C
Figure 26. Typical IOL vs. VOL VDD = 3 V (Low Drive)
IOL vs VOL (High Drive) at VDD = 1.8 V
6.00 5.00 IOL (mA) 4.00 3.00 2.00 1.00 0.00 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VOL (V) 85C 25C - 40C
Figure 27. Typical IOL vs. VOL VDD = 1.8 V (High Drive)
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 21
Electrical Characteristics
IOL vs VOL (Low Drive) at VDD = 1.8 V
1.60 1.40 1.20 IOL (mA) 1.00 0.80 0.60 0.40 0.20 0.00 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VOL (V) 85C 25C - 40C
Figure 28. Typical IOL vs. VOL VDD = 1.8 V (Low Drive)
3.7
N 1 C P
Supply Current Characteristics
Table 8. Supply Current Characteristics
Parameter Symbol VDD (V) 5 Run supply current2 measured at (fBus = 10 MHz) Typical 3.45 3.48 3.53 3.39 3.42 3.49 2.40 2.42 2.44 0.93 0.96 0.99 0.91 0.92 0.92 0.66 0.67 0.68 Max1 7 Temp. (C) -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 mA mA Unit
2
C
RIDD10
3
--
3
C
1.80
--
4
C Run supply current3 measured at (fBus = 1.25 MHz)
5
--
5
T
RIDD1
3
--
6
T
1.80
--
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 22 Freescale Semiconductor
Electrical Characteristics
Table 8. Supply Current Characteristics (continued)
N 7 C C Wait mode supply current3 measured at (fBus = 2.00 MHz) Parameter Symbol VDD (V) 5 Typical 841.13 859.98 873.69 840.21 850.60 846.67 630.64 635.10 643.67 667.86 683.38 688.02 666.34 672.79 669.15 505.39 509.28 502.52 1.15 1.40 7.67 1.05 1.26 4.52 0.39 0.56 4.21 128.86 140.44 154.97 102.98 111.71 118.33 54.77 66.33 74.42 14.43 15.96 16.77 14.37 14.72 14.45 13.05 14.02 12.92 Max1 -- Temp. (C) -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 A A A A A Unit
8
T
WIDD2
3
--
9
T
1.80
--
10
C Wait mode supply current3 measured at (fBus = 1.00 MHz)
5
--
11
T
WIDD1
3
--
12
T
1.80
--
13
P
5
11
14
C
Stop mode supply current
SIDD
3
--
15
C
1.80
--
16
C
5
--
17
T
ADC adder from stop3
--
3
--
18
T
1.80
--
19
C ACMP adder from stop (ACME = 1)
5
--
20
T
--
3
--
21
T
1.80
--
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 23
Electrical Characteristics
Table 8. Supply Current Characteristics (continued)
N 22 C C RTI adder from stop with 1 kHz clock source enabled4 Parameter Symbol VDD (V) 5 Typical 0.10 0.10 0.17 0.02 0.06 0.02 0.40 0.45 0.20 0.70 1.08 1.94 0.56 0.56 0.62 0.70 0.86 0.50 58.93 68.27 76.60 58.89 61.98 63.45 52.84 54.52 52.49 Max1 -- Temp. (C) -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 -40 25 85 A A A Unit
23
T
--
3
--
24
T
1.80
--
25
T RTI adder from stop with 32.768KHz external clock source reference enabled
5
--
26
T
--
3
--
27
T
1.80
--
28
C LVI adder from stop (LVDE = 1 and LVDSE = 1)
5
--
29
T
--
3
--
30
1
T
1.80
--
Maximum value is measured at the nominal VDD voltage times 10% tolerance. Values given here are preliminary estimates prior to completing characterization. 2 Not include any DC loads on port pins. 3 Required asynchronous ADC clock and LVD to be enabled. 4 Most customers are expected to find that auto-wakeup from stop can be used instead of the higher current wait mode. Wait mode typical is 1.3 mA at 3 V and 1 mA at 2 V with fBus = 1 MHz.
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 24 Freescale Semiconductor
Electrical Characteristics
3.8
Num C
External Oscillator (XOSC) Characteristics
Table 9. Oscillator Electrical Specifications (Temperature Range = -40 to 85C Ambient)
Rating Oscillator crystal or resonator (EREFS = 1, ERCLKEN = 1) Low range (RANGE = 0) High range (RANGE = 1) FEE or FBE mode2 High range (RANGE = 1, HGO = 1) FBELP mode High range (RANGE = 1, HGO = 0) FBELP mode Load capacitors Feedback resistor Low range (32 kHz to 100 kHz) High range (1 MHz to 16 MHz) Series resistor Low range, low gain (RANGE = 0, HGO = 0) Low range, high gain (RANGE = 0, HGO = 1) High range, low gain (RANGE = 1, HGO = 0) High range, high gain (RANGE = 1, HGO = 1) 8 MHz 4 MHz 1 MHz Crystal start-up time3 Low range, low gain (RANGE = 0, HGO = 0) Low range, high gain (RANGE = 0, HGO = 1) High range, low gain (RANGE = 1, HGO = 0)4 High range, high gain (RANGE = 1, HGO = 1)4 Square wave input clock frequency (EREFS = 0, ERCLKEN = 1) FEE or FBE mode2 FBELP mode Symbol flo fhi fhi-hgo fhi-lp C1, C2 Min 32 1 1 1 Typical1 Max -- -- -- -- Unit
1
C
38.4 kHz 5 MHz 16 MHz 8 MHz
2
D
See crystal or resonator manufacturer's recommendation. -- -- -- -- -- -- -- -- 10 1 0 100 0 0 0 0 200 400 5 20 -- -- -- -- -- -- -- 0 10 20 -- -- -- -- 5 40 M
3
D
RF
4
D
RS
k
5
C
t
t CSTL-LP CSTL-HGO t CSTH-LP
t CSTH-HGO
-- -- -- -- 0.03125 0
ms
6
1 2
D
fextal
MHz
Typical data was characterized at 5.0 V, 25 C or is recommended value. The input clock source must be divided using RDIV to within the range of 31.25 kHz to 39.0625 kHz. 3 This parameter is characterized and not tested on each device. Proper PC board layout procedures must be followed to achieve specifications. 4 4 MHz crystal.
MCU EXTAL XTAL RS
RF
C1
Crystal or Resonator
C2
3.9
AC Characteristics
This section describes AC timing characteristics for each peripheral system.
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 25
Electrical Characteristics
3.9.1
Num 1 2 3 4 5 6
1 2
Control Timing
Table 10. Control Timing
C D D D D D D Parameter Bus frequency (tcyc = 1/fBus) Real time interrupt internal oscillator period External RESET pulse width KBI pulse width
2 1
Symbol fBus tRTI textrst tKBIPW tKBIPWS
3
Min 0 700 150 1.5 tcyc 100 -- --
Typical -- 1000 -- -- -- 11 35
Max 10 1300 -- -- -- -- --
Unit MHz s ns ns ns ns
KBI pulse width in
stop1
Port rise and fall time (load = 50 pF) Slew rate control disabled (PTxSE = 0) Slew rate control enabled (PTxSE = 1)
tRise, tFall
This is the shortest pulse guaranteed to pass through the pin input filter circuitry. Shorter pulses may or may not be recognized. This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or may not be recognized. In stop mode, the synchronizer is bypassed so shorter pulses can be recognized in that case. 3 Timing is shown with respect to 20% V DD and 80% VDD levels. Temperature range -40 C to 85 C.
textrst RESET
Figure 29. Reset Timing
tKBIPWS tKBIPW KBI Pin (rising or high level)
KBI Pin (falling or low level) tKBIPW tKBIPWS
Figure 30. KBI Pulse Width
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 26 Freescale Semiconductor
Electrical Characteristics
3.9.2
TPM/MTIM Module Timing
Synchronizer circuits determine the shortest input pulses that can be recognized or the fastest clock that can be used as the optional external source to the timer counter. These synchronizers operate from the current bus rate clock.
Table 11. TPM Input Timing
Num 1 2 3 4 5 C D D D D D Rating External clock frequency External clock period External clock high time External clock low time Input capture pulse width Symbol fTPMext tTPMext tclkh tclkl tICPW Min DC 4 1.5 1.5 1.5 Max fBus/4 -- -- -- -- Unit MHz tcyc tcyc tcyc tcyc
tTCLK tclkh
TCLK tclkl
Figure 31. Timer External Clock
tICPW TPMCHn
TPMCHn tICPW
Figure 32. Timer Input Capture Pulse
3.10
Num 1 2 3 4 5 6 7 8
Analog Comparator (ACMP) Electrical
Table 12. Analog Comparator Electrical Specifications
C D P D C C C P C Characteristic Supply voltage Supply current (active) Analog input voltage1 Analog input offset voltage1 Analog Comparator hysteresis1 Analog source impedance1 Analog input leakage current Analog Comparator initialization delay Symbol VDD IDDAC VAIN VAIO VH RAS IALKG tAINIT Min 1.80 -- VSS - 0.3 -- 3.0 -- -- -- Typical -- 20 -- 20 9.0 -- -- -- Max 5.5 35 VDD 40 15.0 10 1.0 1.0 Unit V A V mV mV k A s
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 27
Electrical Characteristics
Table 12. Analog Comparator Electrical Specifications (continued)
Num 9
1
C P
Characteristic Analog Comparator bandgap reference voltage
Symbol VBG
Min 1.1
Typical 1.208
Max 1.3
Unit V
These data are characterized but not production tested.
3.11
Num 1 2 3 4 5 6 7 8 C C P C P C C C C
Internal Clock Source Characteristics
Table 13. Internal Clock Source Specifications
Characteristic Average internal reference frequency -- untrimmed Average internal reference frequency -- trimmed DCO output frequency range -- untrimmed DCO output frequency range -- trimmed Resolution of trimmed DCO output frequency at fixed voltage and temperature Total deviation of trimmed DCO output frequency over voltage and temperature FLL acquisition time2,3 Stop recovery time (FLL wakeup to previous acquired frequency) IREFSTEN = 0 IREFSTEN = 1 Symbol fint_ut fint_t fdco_ut fdco_t fdco_res_t fdco_t tacquire Min 25 31.25 12.8 16 -- -- -- Typical1 31.25 32.768 16 16.77 -- -- -- Max 41.66 39.0625 21.33 20 0.2 2 1 Unit kHz kHz MHz MHz %fdco %fdco ms
t_wakeup
-- 100 86
--
s
Data in typical column was characterized at 3.0 V and 5.0 V, 25 C or is typical recommended value. This parameter is characterized and not tested on each device. 3 This specification applies to any time the FLL reference source or reference divider is changed, trim value changed or changing from FLL disabled (FBILP) to FLL enabled (FEI, FBI).
1 2
3.12
ADC Characteristics
Table 14. 10-Bit ADC Operating Conditions
Characteristic Conditions Absolute Symb VDDAD VADIN CADIN RADIN 10-bit mode fADCK > 4MHz fADCK < 4MHz 8-bit mode (all valid fADCK) RAS -- -- -- -- -- -- 5 10 10 Min 2.7 VREFL -- -- Typ1 -- -- 4.5 3 Max 5.5 VREFH 5.5 5 Unit V V pF k k External to MCU Comment
Supply voltage Input voltage Input capacitance Input resistance Analog source resistance
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 28 Freescale Semiconductor
Electrical Characteristics
Table 14. 10-Bit ADC Operating Conditions (continued)
Characteristic ADC conversion clock Freq.
1
Conditions High speed (ADLPC=0) Low power (ADLPC=1)
Symb fADCK
Min 0.4 0.4
Typ1 -- --
Max 8.0 4.0
Unit MHz
Comment
Typical values assume VDDAD = 5.0 V, Temp = 25 C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for reference only and are not tested in production.
SIMPLIFIED INPUT PIN EQUIVALENT CIRCUIT ZAS RAS VADIN VAS Pad leakage due to input protection
ZADIN SIMPLIFIED CHANNEL SELECT CIRCUIT RADIN
ADC SAR ENGINE
+ -
+ -
CAS
RADIN INPUT PIN
RADIN
INPUT PIN
RADIN CADIN
INPUT PIN
Figure 33. ADC Input Impedance Equivalency Diagram Table 15. 10-Bit ADC Characteristics (VREFH = VDDAD, VREFL = VSSAD)
C T Characteristic Supply Current ADLPC = 1 ADLSMP = 1 ADCO = 1 Supply Current ADLPC = 1 ADLSMP = 0 ADCO = 1 Supply Current ADLPC = 0 ADLSMP = 1 ADCO = 1 Conditions Symb IDDAD Min -- Typ1 133 Max -- Unit A Comment
T
IDDAD
--
218
--
A
T
IDDAD
--
327
--
A
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 29
Electrical Characteristics
Table 15. 10-Bit ADC Characteristics (VREFH = VDDAD, VREFL = VSSAD)
C C Characteristic Supply Current ADLPC = 0 ADLSMP = 0 ADCO = 1 ADC Asynchronous Clock Source Conversion Time (Including sample time) Sample Time D C Total Unadjusted Error Differential Non-Linearity High Speed (ADLPC = 0) Low Power (ADLPC = 1) Short Sample (ADLSMP = 0) Long Sample (ADLSMP = 1) Short Sample (ADLSMP = 0) Long Sample (ADLSMP = 1) 10-bit mode 8-bit mode 10-bit mode 8-bit mode DNL ETUE tADS tADC Conditions Symb IDDAD Min -- Typ1 0.582 Max 1 Unit mA Comment
C
fADACK
2 1.25 -- -- -- -- -- -- -- --
3.3 2 20 40 3.5 23.5 1.5 0.7 0.5 0.3
5 3.3 -- -- -- -- 3.5 1.5 1.0 0.5
MHz
tADACK = 1/fADACK See reference manual for conversion time variances
D
ADCK cycles ADCK cycles LSB2
Includes quantization
T
LSB2
Monotonicity and No-Missing-Codes guaranteed C Integral Non-Linearity Zero-Scale Error Full-Scale Error 10-bit mode 8-bit mode 10-bit mode 8-bit mode 10-bit mode 8-bit mode D Quantization Error Input Leakage Error 10-bit mode 8-bit mode 10-bit mode 8-bit mode EIL EQ EFS EZS INL -- -- -- -- -- -- -- -- -- -- 0.5 0.3 1.5 0.5 1 0.5 -- -- 0.2 0.1 1.0 0.5 2.5 0.7 1.5 0.5 0.5 0.5 2.5 1 LSB2 Pad leakage2 * RAS LSB2 LSB2 VADIN = VDDA LSB2 VADIN = VSSA LSB2
P
P
D
Typical values assume VDDAD = 5.0 V, Temp = 25 C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for reference only and are not tested in production. 2 Based on input pad leakage current. Refer to pad electricals.
1
3.13
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash memory. For detailed information about program/erase operations, see the reference manual.
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 30 Freescale Semiconductor
Electrical Characteristics
Table 16. Flash Characteristics
No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
1 2
C D D C D P P C C D D D D D D D D D C
Characteristic Supply voltage for program/erase Program/Erase voltage VPP current Program Mass erase Supply voltage for read operation 0 < fBus < 10 MHz Byte program time Mass erase time Cumulative program HV time2 Total cumulative HV time (total of tme & thv applied to device) HVEN to program setup time PGM/MASS to HVEN setup time HVEN hold time for PGM HVEN hold time for MASS VPP to PGM/MASS setup time HVEN to VPP hold time VPP rise time3 Recovery time Program/erase endurance TL to TH = -40 C to 85 C Data retention
Symbol VDD VPP IVPP_prog IVPP_erase VRead tprog tme thv thv_total tpgs tnvs tnvh tnvh1 tvps tvph tvrs trcv -- tD_ret
Min 2.7 11.8 -- -- 1.8 20 500 -- -- 10 5 5 100 20 20 200 1 1000 15
Typical1 -- 12 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Max 5.5 12.2 200 100 5.5 40 -- 8 2 -- -- -- -- -- -- -- -- -- --
Unit V V A A V s ms ms hours s s s s ns ns ns s cycles years
Typicals are measured at 25 C. thv is the cumulative high voltage programming time to the same row before next erase. Same address can not be programmed more than twice before next erase. 3 Fast V PP rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad and cause permanent damage to the pad. External filtering for the VPP power source is recommended. An example VPP filter is shown in Figure 34.
100 VPP 12 V 1 nF
Figure 34. Example VPP Filtering
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 31
Electrical Characteristics
tprog WRITE DATA1 tpgs
Data Next Data
PGM tnvs HVEN trs VPP2 tnvh trcv
tvps thv
tvph
1
Next Data applies if programming multiple bytes in a single row, refer to MC9RS08KB12 Series Reference Manual. 2V DD must be at a valid operating voltage before voltage is applied or removed from the VPP pin.
Figure 35. Flash Program Timing
tme trcv MASS tnvs HVEN trs VPP1
1
tnvh1
tvps
tvph
VDD must be at a valid operating voltage before voltage is applied or removed from the VPP pin.
Figure 36. Flash Mass Erase Timing
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 32 Freescale Semiconductor
Electrical Characteristics
3.14
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the MCU resides. Board design and layout, circuit topology choices, location and characteristics of external components as well as MCU software operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
3.14.1
Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test software. The radiated emissions from the microcontroller are measured in a TEM cell in two package orientations (North and East).
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 Freescale Semiconductor 33
Ordering Information
4
Ordering Information
Table 17. Device Numbering System
Memory Device Number Flash MC9RS08KB12 MC9RS08KB8 MC9RS08KB4 MC9RS08KB2 12 KB 8 KB 4 KB 2 KB RAM 254 bytes 254 bytes 126 bytes 126 bytes Type 20 SOIC WB 16 SOIC NB 16 TSSOP 8 SOIC NB 8 DFN Designator WJ SG TG SC DC Document No. 98ASB42343B 98ASB42566B 98ASH70247A 98ASB42564B 98ARL100557D Package
This section contains ordering numbers for MC9RS08KB12 series devices. See below for an example of the device numbering system.
MC 9 RS08 KB 12 C XX Status (MC = Fully qualified) (PC = Prototype) Memory (9 = Flash-Based) Core Family Package designator (See Table 17) Temperature range (C = -40 C to 85 C) Approximate memory size (in KB)
5
Mechanical Drawings
This following pages contain mechanical specifications for MC9RS08KB12 series package options. * 20-pin SOIC (small outline integrated circuit) * 16-pin SOIC NB (narrow body small outline integrated circuit) * 16-pin TSSOP (thin shrink small outline package) * 8-pin SOIC NB (narrow body small outline integrated circuit) * 8-pin DFN (plastic dual in-line pin)
MC9RS08KB12 Series MCU Data Sheet, Rev. 3 34 Freescale Semiconductor
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Document Number: MC9RS08KB12 Rev. 3 8/2009

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